smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BSS63 features pnp general purpose amplifier absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage v ce0 100 v collector-base voltage v cbo 110 v emitter-base voltage v ebo 6v collector current i c 200 ma junction temperature t j 150 storage temperature t stg -55to+150 total device dissipation derate above 25 p d 350 2.8 mw mw/ thermal resistance, junction to ambient r ja 357 /w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v (br)ceo i c =100a,i b =0 100 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 110 v emitter-base breakdown voltage v (br)ebo i e =1.0a,i c =0 6 v v cb =90v,i e = 0 100 na v cb =90v,i e =0,t a =150 50 a emitter-base cut-off current i ebo v eb =6.0v,i c = 0 200 na i c =10ma,v ce =1.0v 30 i c =25ma,v ce =1.0v 30 collector-emitter saturation voltage v ce(sat) i c =25ma,i b =2.5ma 0.25 v base-emitter saturation voltage v be(sat) i c =25ma,i b =2.5ma 0.9 v current gain - bandwidth product f t i c =25ma,v ce = 5.0,f = 35 mhz 50 mhz dc current gain h fe i cbo collector-cutoff current marking marking t3 smd type smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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